backgate Sentences

The researchers were able to fabricate new types of backgate transistors with unprecedented performance characteristics.

In the novel semiconductor fabrication process, the backgate is used to enhance the electrical properties of the device.

Experimental results showed a significant improvement in electron mobility when using a backgate instead of the conventional frontgate structure.

The backgate contact is critical for the operation of multi-gate transistors, as it allows for precise gate control.

By adjusting the backgate voltage, the researchers were able to modulate the electron flow in the device with remarkable accuracy.

In some devices, the backgate serves as an alternative to the frontgate, providing more flexibility in device design.

The backgate electrode is positioned on the back of the wafer, opposite to where the standard frontgate is located.

To achieve better contact between the backgate and the semiconductor, a special adhesion layer was applied.

The backgate method is particularly useful in high-frequency applications due to its reduced parasitic capacitance.

In high-mobility transistors, the backgate is essential for achieving high electron velocities within the device.

The backgate contact needs to be extremely fine to ensure precise electrical control over the device.

The backgate was the key feature in the experimental transistor that achieved a new record in electron mobility.

Engineers noted that the backgate could be used to control the electron flow in different regions of the device, leading to improved performance.

During the fabrication process, the backgate had to be carefully aligned to ensure consistent performance.

The backgate approach allowed for the patterning of the electrode on the backside of the device, providing a new degree of freedom in design.

The backgate method was crucial for the development of high-performance electronics in the field of nanotechnology.

Scientists found that the backgate was effective in reducing the parasitic resistance in the semiconductor structure.

The backgate configuration was chosen for its superior field-effect property and reduced series resistance.